2007. 3. 28 1/3 semiconductor technical data ktc3206 epitaxial planar npn transistor revision no : 1 black and white tv video output aplication. high voltage switching application. features high breakdown voltage : v ceo =150v(min.). low output capacitance : c ob =5.0pf(max.). high transition frequency : f t =120mhz(typ.). maximum rating (ta=25 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 2 5 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 ) note : h fe classification 0:70 140, y:120 240 characteristic symbol rating unit collector-base voltage v cbo 200 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5 v collector current i c 50 ma emitter current i e -50 ma base current i b 5 ma collector power dissipation p c 1 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =200v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =5v, i c =10ma 70 - 240 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 0.5 v base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma - - 1.0 v transition frequency f t v ce =30v, i c =10ma - 120 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 3.5 5.0 pf
2007. 3. 28 2/3 ktc3206 revision no : 1
2007. 3. 28 3/3 ktc3206 revision no : 1
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